inchange semiconductor isc product specification isc silicon pnp power transistor bd934/936/938/940/942 description dc current gain- : h fe = 40(min)@ i c = -150ma complement to type bd933/935/937/939/941 applications designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. absolute maximum ratings(t a =25 ) symbol parameter value unit bd934 -45 bd936 -60 bd938 -100 bd940 -120 v cbo collector-base voltage bd942 -140 v bd934 -45 bd936 -60 bd938 -80 bd940 -100 v ceo collector-emitter voltage bd942 -120 v v ebo emitter-base voltage -5 v i c collector current-continuous -3 a i cm collector current-peak -7 a i b b base current-continuous -0.5 a p c collector power dissipation @ t c =25 30 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 4.17 /w r th j-a thermal resistance,junction to ambient 70 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor bd934/936/938/940/942 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bd934 -45 bd936 -60 bd938 -80 bd940 -100 v ceo(sus) collector-emitter sustaining voltage bd942 i c = -100ma ; i b = 0 -120 v v ce( sat ) collector-emitter saturation voltage i c = -1a; i b = -0.1a b -0.6 v v be( on ) base-emitter on voltage i c = -1a; v ce = -2v -1.3 v i cbo collector cutoff current v cb = v cbomax ; i e = 0 v cb = v cbomax ; i e = 0,t j =150 -0.05 -1 ma i ceo collector cutoff current v ce = v ceomax ; i b = 0 -0.1 ma i ebo emitter cutoff current v eb = -5v; i c = 0 -0.2 ma h fe-1 dc current gain i c = -150ma ; v ce = -2v 40 250 h fe-2 dc current gain i c = -1a ; v ce = -2v 25 f t current-gain?bandwidth product i c = -250ma ; v ce = -10v 3 mhz switching times t on turn-on time 0.2 0.6 s t off turn-off time i c = -1.0a; i b1 = -i b2 = -0.1a 0.7 2.4 s isc website www.iscsemi.cn 2
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